PART |
Description |
Maker |
HMC482ST89E |
SiGe HBT GAIN BLOCK MMIC AMPLIFIE /DC - 5.0 GHz
|
Hittite Microwave Corporation
|
ATF-10236 ATF-10236-STR ATF-10236-TR1 ATF10236 |
ER 2C 2#16S PIN RECP BOX 0.5?12 GHz Low Noise Gallium Arsenide FET 0.5-12 GHz Low Noise Gallium Arsenide FET 0.512 GHz Low Noise Gallium Arsenide FET
|
HP[Agilent(Hewlett-Packard)] Agilent (Hewlett-Packard)
|
ST-4 |
MINI-NOISE DIODES 10 KHZ TO 3 GHZ 0.00001 GHz - 3 GHz, SILICON, NOISE DIODE
|
Micronetics, Inc.
|
TMT-4-2002 |
Temperature Compensated Low Noise Amplifier 2 GHz - 4 GHz
|
TELEDYNE[Teledyne Technologies Incorporated]
|
TLT-8-2014 TLT-8-2013 |
Temperature Compensated Low Noise Amplifier 2 GHz - 8 GHz
|
TELEDYNE[Teledyne Technologies Incorporated]
|
TLT-8-2015 |
Temperature Compensated Low Noise Amplifier 2 GHz - 8 GHz
|
Teledyne Technologies Incorporated
|
PE15A1000 |
1.5 dB NF, 10 mW, 1 GHz to 2 GHz, Low Noise Amplifier
|
Pasternack Enterprises, Inc.
|
PE15A1003 |
2.2 dB NF, 20 mW, 8 GHz to 12 GHz, Low Noise Amplifier
|
Pasternack Enterprises, Inc.
|
TLA-18-6004 |
Low Noise Amplifier 6 GHz - 18 GHz
|
Teledyne Technologies Incorporated. TELEDYNE[Teledyne Technologies Incorporated]
|
CLA-13-6014 CLA-13-6013 |
Low Noise Amplifier 6 GHz - 13 GHz
|
Teledyne Technologies Incorporated. TELEDYNE[Teledyne Technologies Incorporated]
|
CFY30 Q62703-F97 |
Advanced PFC/PWM Combination Controllers 20-PDIP -40 to 105 GaAs FET (Low noise Fmin = 1.4 dB @ 4 GHz High gain 11.5 dB typ. @ 4 GHz) From old datasheet system
|
SIEMENS AG Infineon SIEMENS[Siemens Semiconductor Group]
|